Graphene, boron nitride can grow together with new epitaxial technique

01/13/2014 | IEEE Spectrum

A new technique for creating a 2D hybrid of graphene and boron nitride allows the two materials to grow together with no visible boundary. The process is based on horizontal epitaxial growth of graphene on a copper substrate, with boron nitride later added via chemical vapor deposition. "Graphene has a lot of potential, but it has limits. To make use of graphene in applications or devices, we need to integrate graphene with other materials," said An-Ping Li of Oak Ridge National Laboratory, which developed the technique along with the University of Tennessee.

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