Samsung talks up its 32nm HKMG process, challenging TSMC

02/23/2012 | EE Times Asia (free registration)

Samsung Electronics gave an extensive presentation on its 32-nanometer high-k metal gate process at the International Solid-State Circuits Conference, disclosing the dynamic thermal management and body bias techniques incorporated into the fabrication process. Samsung is bidding to build up its silicon foundry business, and with Taiwan Semiconductor Manufacturing having difficulties with volume production of 28nm chips, it may be able to attract more foundry customers, this article notes.

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