Researchers create nanodot memory that runs faster than RAM chips

04/22/2012 | Register (U.K.), The

Researchers in Taiwan and the U.S. have come up with a new memory type that is said to run 10 to 100 times faster than existing random-access memory chips. The new memory device has silicon nanodots embedded in a nonconductive layer, covered with a thin-film metallic layer. The technology is detailed in a paper published in the Applied Physics Letters journal.

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