MIT researchers stack graphene atop boron nitride

05/19/2013 | EE Times India (free registration)

Researchers at the Massachusetts Institute of Technology have placed a layer of graphene on top of hexagonal boron nitride to create a promising new semiconductor material. "By combining two materials, we created a hybrid material that has different properties than either of the two," said Pablo Jarillo-Herrero, an assistant professor of physics. He added, "We made a high-quality semiconductor by putting them together."

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