Intel exec: 2D NAND flash could scale to 15nm, 10nm nodes

05/28/2013 | EE Times India (free registration)

Production of 2D NAND flash memory devices conceivably could be scaled to the 15-nanometer and 10nm process nodes, according to Keyvan Esfarjani of IM Flash Technologies, the joint venture between Intel and Micron Technology. "The NAND market will be with us and growing for years to come. 2D NAND continues with the planar floating gate cell and 3D NAND will carry us beyond the 10nm limit," he said.

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