Report: Wide-bandgap ICs to lead among discrete devices for solar inverters

06/26/2013 | EE Times Asia (free registration)

Gallium nitride, silicon carbide and other wide-bandgap semiconductors will be among the leading discrete devices going into solar inverters as module manufacturers try to reduce the levelized cost of electricity from solar power sources, according to Lux Research. "The performance benefits from both are such that inverter suppliers could charge a premium price and still achieve a significantly lower LCOE," said Lux's Pallavi Madakasira.

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