How to deal with power loss in switching MOSFETs

08/1/2011 | EE Times

Andrew Smith, the engineering training manager at Power Integrations, describes how to calculate power loss in switching MOSFETs -- metal-oxide-semiconductor field-effect transistor -- especially in applications in the low-to-mid-power range. In higher-power applications, power loss often comes from on-resistance parameters in the resistive element, Smith writes.

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