New process will integrate GeSn transistors and MOSFETs on silicon

09/18/2013 | EE Times · Electronics Weekly (U.K.)

Researchers in Belgium and Japan have come up with a way to put germanium-tin films on silicon substrates to produce depletion-mode junctionless metal-oxide semiconductor field-effect transistors. The researchers report they were able to make single-crystal films about 10 nanometers thick on top of silicon to form the GeSn transistors.

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EE Times · Electronics Weekly (U.K.)

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