Resistive RAM is touted as a successor to 3D NAND flash

09/19/2013 |

Resistive random-access memory is the technology that will someday succeed three-dimensional NAND flash memory devices, which are just now reaching market, Mark LaPedus writes. Some industry observers are touting spin-transfer torque magnetoresistive RAMs and phase-change memories as the preferable next-generation memory technology, he notes.

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