Researchers: Resistive RAM could succeed NAND flash memory

10/6/2011 | DigiTimes

Resistive random-access memory is being pursued by the Industrial Technology Research Institute of Taiwan as an alternative technology to NAND flash memory. ITRI has been able to produce resistive RAMs with 30-nanometer linewidths and is pushing on to make the memory devices with 20nm process technology, according to Frank Chen, general director of the institute's nanotechnology research center.

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