Georgia Tech researchers grow graphene on SiC wafer

10/11/2011 | Electronics Weekly (U.K.)

Researchers at the Georgia Institute of Technology have successfully grown a layer of graphene on a silicon carbide wafer, a development that has the potential to lead to the creation of graphene-based ICs. The wafer, measuring 10 by 10 millimeters, was heated to about 1,500 degrees Celsius, driving silicon molecules from the surface and leaving behind a layer of what Georgia Tech called "high-quality" graphene.

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