Samsung develops NAND memory with features of 10-19nm

11/20/2012 | EE Times

Samsung Electronics has a 64-gigabit NAND flash memory device in production that has features ranging from 10 nanometers to 19nm, the company reported. The memory chips are in a 64GB embedded multimedia memory card with a high-speed interface that Samsung has submitted to JEDEC for consideration as a possible standard.

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