SK Hynix kicks off volume production for 16nm NAND flash

11/20/2013 | DigiTimes · Yonhap News Agency (South Korea)

Volume production of NAND flash memory devices made with 16-nanometer features has begun at SK Hynix. The Korean chipmaker is turning out 64-gigabit multi-layer cell NAND flash memories, with plans to migrate to volume production of 128Gb MLC NAND flash in early 2014. The new 16nm NAND flash memories incorporate air-gap process technology to provide insulation of circuits on the chip, according to SK Hynix.

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DigiTimes · Yonhap News Agency (South Korea)

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