Micron: 20nm HKMG NAND flash won't pose reliability problems

12/22/2011 | XBitLabs.com

NAND flash-memory devices made with a 20-nanometer process and high-k metal gate technology won't be less reliable than multilevel cell NAND flash made with a 25nm process, according to Micron Technology. The 20nm HKMG NAND flash will be fabricated by IM Flash Technologies, a joint venture between Intel and Micron.

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